CSD86360Q5D
Manufacturer:
Texas Instruments
Mfr.Part #:
CSD86360Q5D
Datasheet:
Description:
MOSFETs SON-8 SMD/SMT N-Channel number of channels:2 13 W 25 V Continuous Drain Current (ID):50 A 9.7 nC, 23 nC
| Parameter | Value |
|---|---|
| Length | 5 mm |
| Width | 6 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Height | 1.5 mm |
| Packaging | Reel |
| Thickness | 1.5 mm |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Gold |
| Output Voltage | 25 V |
| Lifecycle Status | Production (Last Updated: 1 day ago) |
| Max Power Dissipation | 13 W |
| Max Supply Voltage | 22 V |
| Min Supply Voltage | 4.5 V |
| Power Dissipation | 13 W |
| Number of Channels | 2 |
| Input capacitance | 2.06 nF |
| Continuous Drain Current (ID) | 50 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Turn-On Delay Time | 9.5 ns |
| Turn-Off Delay Time | 29.3 ns |
| Number of Outputs | 2 |
| Fall Time | 6.6 ns |
| Rise Time | 14.8 ns |
| Nominal Supply Current | 10 µA |
| Gate Charge | 9.7 nC, 23 nC |
| Number of Drivers | 2 |
| Drain to Source Resistance | 3.7 mΩ |
| Max Junction Temperature (Tj) | 125 °C |
| Gate to Source Voltage (Vgs) | 10 V |
| Drain to Source Breakdown Voltage (Vds) | 25 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Gate to Source Threshold Voltage | 1 V, 750 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 25
Distributors
pcbx
pcbxUnit Price$1.81594
Ext.Price$1.81594
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.81594 | $1.81594 |
| 10 | $1.57210 | $15.72100 |
| 25 | $1.43605 | $35.90125 |
| 50 | $1.31177 | $65.58850 |
| 100 | $1.19824 | $119.82400 |
| 300 | $1.16174 | $348.52200 |
| 500 | $1.12636 | $563.18000 |
| 1000 | $1.09571 | $1095.71000 |